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TMCNet:  ON Semiconductor introduces two new single-channel power MOSFETs

[December 04, 2012]

ON Semiconductor introduces two new single-channel power MOSFETs

Dec 04, 2012 (Datamonitor via COMTEX) -- ON Semiconductor, a supplier of silicon solutions for energy efficient electronics, has introduced two new single-channel power MOSFETs to enable better power conservation.

The new MCH3383 P-channel MOSFET has a drain-to-source voltage (VDSS) of 12 volts (V) and a drain current (ID) of 3.5 amperes (A) with an on-state resistance (RDS(ON)) of 69 milliohms, while the MCH3484 N-channel MOSFET has a VDSS of 20 V, an ID of 4.5 A and an RDS(ON) of 330 milliohms. These devices are suited to use in IC recorders and smartphones, the company said.


Additionally, the NCP333, NCP334, NCP335, NCP336, and NCP337 are newly introduced cost-effective, compact load switches. Covering a 1.2V to 5.5V input voltage range, these MOSFET-based devices each have a built-in output discharge path to eliminate residual voltages on the output rail. They are optimized for use in cell phones, notebook/tablet computers and digital cameras.

The NCP702, NCP703 and NCP729 are low dropout (LDO) linear voltage regulators with a 2.0 V to 5.5 V input voltage range, low quiescent current and built-in thermal shutdown mechanism. These devices' are optimized for noise-sensitive applications, where signal integrity must be maintained, such as phase locked loops, oscillators, frequency synthesizers and low noise amplifiers, the company added.

Among the end products they will prove particularly suited to inclusion in are smartphones, digital cameras, tablet computers, portable DVD/media players, wireless headsets, wifi boards and portable GPS systems, as well as portable medical equipment, the company reported.

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